| Compare | Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | Other Names | ECCN | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
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Micron Technology Inc. 29F8T08EWLEEM5-QJ:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F8T08EWLEEM5-QJ:ETR | 1,500 | ||||||||||||||||||
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Micron Technology Inc. 61K512M32KPA-14:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 95°C (TC) | Surface Mount | 180-TFBGA | SGRAM - GDDR6 | 1.3095V ~ 1.3905V | 180-FBGA (12x14) | 557-MT61K512M32KPA-14:C | 1 | 7 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | POD_135 | - | |||||
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Micron Technology Inc. 62F1G64D4EK-023 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F1G64D4EK-023WT:BTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | Parallel | - | |||||
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Micron Technology Inc. FC64GASAONS-IT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | 557-MTFC64GASAONS-ITTR | 2,000 | 52 MHz | Non-Volatile | 512Gbit | FLASH | 64G x 8 | UFS2.1 | - | |||||
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Micron Technology Inc. 29F8T08EWLKEM5-ITF:K TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F8T08EWLKEM5-ITF:KTR | 2,000 | ||||||||||||||||||
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Micron Technology Inc. FC128GAVATTC-AIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MTFC128GAVATTC-AIT | 1 | ||||||||||||||||||
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Micron Technology Inc. 40A512M8SA-062E:F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | download | 557-MT40A512M8SA-062E:FTR | 2,000 | 1.6 GHz | Volatile | 4Gbit | 19 ns | DRAM | 512M x 8 | POD | 15ns | |||
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Micron Technology Inc. 53E768M64D4HJ-046 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT53E768M64D4HJ-046WT:BTR | 2,000 | ||||||||||||||||||
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Micron Technology Inc. 62F768M64D4ZU-026 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | - | - | MT62F768 | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F768M64D4ZU-026WT:B | 1 | 3.2 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | Parallel | - | ||||
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Micron Technology Inc. 53E1536M64D8HJ-046 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | - | 556-WFBGA (12.4x12.4) | 557-MT53E1536M64D8HJ-046WT:BTR | 2,000 | 2.133 GHz | Volatile | 96Gbit | DRAM | 1.5M x 64 | - | - | |||||
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Micron Technology Inc. 40A512M8SA-075:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | download | 557-MT40A512M8SA-075:F | 1 | 1.333 GHz | Volatile | 4Gbit | 19 ns | DRAM | 512M x 8 | POD | 15ns | |||
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Micron Technology Inc. 29F1T08EELEEJ4-R:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 70°C | Surface Mount | 132-VBGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-VBGA (12x18) | 557-MT29F1T08EELEEJ4-R:ETR | 2,000 | Non-Volatile | 1Tbit | FLASH | 128G x 8 | Parallel | - | ||||||
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Micron Technology Inc. FC32GAZAQHD-WT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | e•MMC™ | Tape & Reel (TR) | Active | -25°C ~ 85°C (TA) | Surface Mount | 153-VFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-VFBGA (11.5x13) | 557-MTFC32GAZAQHD-WTTR | 2,000 | 200 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | eMMC_5.1 | - | |||||
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Micron Technology Inc. 29F8T08ESLEEG4-QB:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08ESLEEG4-QB:E | 1 | ||||||||||||||||||
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Micron Technology Inc. FC256GASAONS-IT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MTFC256GASAONS-ITTR | 2,000 | ||||||||||||||||||
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Micron Technology Inc. 62F1G64D4ZV-023 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT62F1G64D4ZV-023WT:B | 1 | ||||||||||||||||||
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Micron Technology Inc. 29F2T08ELLEEG7-QB:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F2T08ELLEEG7-QB:E | 1 | ||||||||||||||||||
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Micron Technology Inc. 29F8T08EWLEEM5-T:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 70°C | - | - | FLASH - NAND (TLC) | - | - | 557-MT29F8T08EWLEEM5-T:ETR | 1,500 | Non-Volatile | 8Tbit | FLASH | 1T x 8 | Parallel | - | ||||||
| Micron Technology Inc. 53E1G16D1FW-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1G16D1FW-046WT:A | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 1G x 16 | Parallel | 18ns | |||||
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Micron Technology Inc. 53E512M64D4HJ-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Obsolete | 557-MT53E512M64D4HJ-046WT:D | OBSOLETE | 1 | |||||||||||||||||
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Micron Technology Inc. 29F2T08ELLCEG7-R:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F2T08ELLCEG7-R:C | 1 | ||||||||||||||||||
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Micron Technology Inc. 53E1536M64D8HJ-046 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | - | 556-WFBGA (12.4x12.4) | 557-MT53E1536M64D8HJ-046WT:C | 1 | 2.133 GHz | Volatile | 96Gbit | DRAM | 1.5M x 64 | - | - | |||||
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Micron Technology Inc. 62F1G64D4EK-026 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT62F1G64D4EK-026WT:C | 1 | ||||||||||||||||||
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Micron Technology Inc. 62F1536M64D8CL-031 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 557-MT62F1536M64D8CL-031WT:B | 1 | ||||||||||||||||||
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Micron Technology Inc. 53E512M32D2FW-046 AUT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E512M32D2FW-046AUT:DTR | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | ||||
|
Micron Technology Inc. 53E512M32D2FW-046 AUT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Bulk | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E512M32D2FW-046AUT:D | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | ||||
| Micron Technology Inc. 53E1G32D2FW-046 AIT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1G32D2FW-046AIT:C | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 1G x 32 | Parallel | 18ns | |||||
| Micron Technology Inc. 53E512M32D1ZW-046BAAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E512M32D1ZW-046BAAT:B | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | |||||
| Micron Technology Inc. 53E1G32D2FW-046 AAT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1G32D2FW-046AAT:CTR | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 1G x 32 | Parallel | 18ns | |||||
| Micron Technology Inc. 53E512M32D1ZW-046BAIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E512M32D1ZW-046BAIT:BTR | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns |
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