| Compare | Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Micron Technology Inc. 58L64L36PT-7.5 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | SYNCBURST™ | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | SRAM - Standard | 3.135V ~ 3.6V | 100-TQFP (14x20.1) | download | RoHS non-compliant | 3 (168 Hours) | Vendor Undefined | 3A991B2A | 8542.32.0041 | 500 | 133 MHz | Volatile | 2Mbit | 4 ns | SRAM | 64K x 36 | Parallel | - | ||||
| Micron Technology Inc. 58L32L32FT-10 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | SYNCBURST™ | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | MT58L32L32 | SRAM - Synchronous | 3.135V ~ 3.6V | 100-TQFP (14x20.1) | download | RoHS non-compliant | 3 (168 Hours) | Vendor Undefined | 3A991B2B | 8542.32.0041 | 1 | 66 MHz | Volatile | 1Mbit | 10 ns | SRAM | 32K x 32 | Parallel | - | |||
| Micron Technology Inc. 54V1MH18EF-7.5 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | QDR® | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | SRAM - Synchronous | 2.4V ~ 2.6V | 165-FBGA (13x15) | download | 3A991B2A | 8542.32.0041 | 1 | 133 MHz | Volatile | 18Mbit | 3 ns | SRAM | 1M x 18 | HSTL | - | |||||||
 |
Micron Technology Inc. 40A512M16Z11BWC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | - | Surface Mount | Die | MT40A512M16 | SDRAM - DDR4 | 1.14V ~ 1.26V | Wafer | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 1 | Volatile | 8Gbit | DRAM | 512M x 16 | Parallel | - | |||||||
| Micron Technology Inc. 61M256M32KPA-14 AAT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -40°C ~ 105°C (TC) | Surface Mount | 180-TFBGA | MT61M256 | SGRAM - GDDR6 | 1.21V ~ 1.29V | 180-FBGA (12x14) | ROHS3 Compliant | 3 (168 Hours) | 557-MT61M256M32KPA-14AAT:CTR | OBSOLETE | 2,000 | 1.5 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | Parallel | - | ||||||
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Micron Technology Inc. 53E128M16D1DS-053 IT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-WFBGA (10x14.5) | 3 (168 Hours) | 557-MT53E128M16D1DS-053IT:ATR | OBSOLETE | 2,000 | 1.866 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | Parallel | - | ||||||
| Micron Technology Inc. FC256GASAONS-IT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | e•MMC™ | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 153-TFBGA | MTFC256 | FLASH - NAND | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | -791-MTFC256GASAONS-IT | 3A991B1A | 8542.32.0071 | 1,520 | 52 MHz | Non-Volatile | 2Tbit | FLASH | 256G x 8 | UFS2.1 | - | ||||
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Micron Technology Inc. 29F16G08ABECBM72A3WC1L | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F16G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | Wafer | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F16G08ABECBM72A3WC1L | 1 | Non-Volatile | 16Gbit | FLASH | 2G x 8 | - | - | ||||||
|
Micron Technology Inc. 29F1G08ABBEAM68M3WC1L | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F1G08 | FLASH - NAND (SLC) | 1.7V ~ 1.95V | Die | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F1G08ABBEAM68M3WC1L | 1 | Non-Volatile | 1Gbit | FLASH | 128M x 8 | - | - | ||||||
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Micron Technology Inc. 29F1G08ABAEAM68M3WC1L | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F1G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | Die | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F1G08ABAEAM68M3WC1L | 1 | Non-Volatile | 1Gbit | FLASH | 128M x 8 | - | - | ||||||
|
Micron Technology Inc. 40A1G16KD-062E IT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | MT40A1G16 | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (9x13) | download | ROHS3 Compliant | REACH Unaffected | 557-MT40A1G16KD-062EIT:E | 3A991B1A | 8542.32.0071 | 1 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 1G x 16 | Parallel | 15ns | ||
| Micron Technology Inc. 40A2G8SA-062E IT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT40A2G8 | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT40A2G8SA-062EIT:F | 3A991B1A | 8542.32.0071 | 1 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 2G x 8 | Parallel | 15ns | ||
| Micron Technology Inc. 53E512M64D2NZ-46 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -25°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 376-WFBGA (14x14) | download | ROHS3 Compliant | REACH Unaffected | 557-MT53E512M64D2NZ-46WT:B | 1,190 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | |||||
| Micron Technology Inc. 40A2G16TBB-062E:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Tray | Active | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | MT40A2G16 | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (7.5x13) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT40A2G16TBB-062E:F | 1,020 | 1.6 GHz | Volatile | 32Gbit | 13.75 ns | DRAM | 2G x 16 | Parallel | - | |||||
| Micron Technology Inc. 53E1G32D2FW-046 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C (TC) | Surface Mount | 200-TFBGA | MT53E1G32 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT53E1G32D2FW-046WT:BTR | 2,000 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 1G x 32 | Parallel | 18ns | ||||
| Micron Technology Inc. 53E512M32D1ZW-046 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C (TC) | Surface Mount | 200-TFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT53E512M32D1ZW-046WT:BTR | 2,000 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | ||||
| Micron Technology Inc. 53E512M64D2HJ-046 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C (TC) | Surface Mount | 556-TFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | download | ROHS3 Compliant | REACH Unaffected | 557-MT53E512M64D2HJ-046WT:BTR | 2,000 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | |||||
| Micron Technology Inc. 25QL256BBB8E12-CAUT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | FLASH - NOR | 2.7V ~ 3.6V | 24-T-PBGA (6x8) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | -791-MT25QL256BBB8E12-CAUT | 1,120 | 133 MHz | Non-Volatile | 128Mbit | 5 ns | FLASH | 16M x 8 | SPI - Quad I/O | 1.8ms | |||||
|
Micron Technology Inc. 29VZZZAD81SFSL-046 W.22C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | ROHS3 Compliant | 557-MT29VZZZAD81SFSL-046W.22CTR | 1 | |||||||||||||||||||||
|
Micron Technology Inc. 29VZZZBD81SLSL-046 W.22D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29VZZZBD81SLSL-046W.22DTR | 2,000 | ||||||||||||||||||||||
|
Micron Technology Inc. 29F16T08GSLCEG4-QB:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F16T08GSLCEG4-QB:C | 1 | ||||||||||||||||||||||
|
Micron Technology Inc. 41K512M16VRP-107 IT:P TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | SDRAM - DDR3L | 1.283V ~ 1.45V | 96-FBGA (8x14) | 557-MT41K512M16VRP-107IT:PTR | 2,000 | 933 MHz | Volatile | 8Gbit | 20 ns | DRAM | 512M x 16 | Parallel | 15ns | ||||||||
| Micron Technology Inc. 53E256M16D1FW-046 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E256M16D1FW-046WT:BTR | 2,000 | 2.133 GHz | Volatile | 4Gbit | 3.5 ns | DRAM | 256M x 16 | Parallel | 18ns | ||||||||
|
Micron Technology Inc. 40A2G8AG-062E AAT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TC) | - | - | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 557-MT40A2G8AG-062EAAT:F | 1 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 2G x 8 | Parallel | 15ns | ||||||||
|
Micron Technology Inc. FC64GASAONS-AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TC) | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | 557-MTFC64GASAONS-AAT | 1 | 52 MHz | Non-Volatile | 512Gbit | FLASH | 64G x 8 | UFS2.1 | - | |||||||||
|
Micron Technology Inc. 29F8T08EWLCEM5-QJ:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08EWLCEM5-QJ:C | 1 | ||||||||||||||||||||||
|
Micron Technology Inc. 29F1T08EBLCEJ4-ES:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F1T08EBLCEJ4-ES:C | 1 | ||||||||||||||||||||||
|
Micron Technology Inc. FC32GASAONS-AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TC) | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | 557-MTFC32GASAONS-AAT | 1 | 52 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | UFS2.1 | - | |||||||||
|
Micron Technology Inc. 53E1536M64D8HJ-046 AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | - | 556-WFBGA (12.4x12.4) | 557-MT53E1536M64D8HJ-046AIT:BTR | 2,000 | 2.133 GHz | Volatile | 96Gbit | DRAM | 1.5M x 64 | - | - | |||||||||
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Micron Technology Inc. 62F3G32D8DV-023 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F3G32D8DV-023AAT:BTR | 2,000 | 4.266 GHz | Volatile | 96Gbit | DRAM | 3G x 32 | Parallel | - |
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