| Compare | Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | Other Names | ECCN | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
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Micron Technology Inc. 62F1G32D2DS-023 IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-023IT:BTR | 2,000 | 3.2 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | ||||
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Micron Technology Inc. 62F512M32D2DS-031 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 125°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | - | 200-WFBGA (10x14.5) | 557-MT62F512M32D2DS-031AUT:B | 1 | 3.2 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | Parallel | - | ||||
| Micron Technology Inc. 53E128M32D2FW-046 AUT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E128M32D2FW-046AUT:A | 1 | 2.133 GHz | Volatile | 4Gbit | 3.5 ns | DRAM | 128M x 32 | Parallel | 18ns | ||||
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Micron Technology Inc. 29F2T08EMLCEJ4-QJ:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F2T08EMLCEJ4-QJ:CTR | 2,000 | |||||||||||||||||
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Micron Technology Inc. 62F1G32D2DS-026 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-026WT:C | 1 | 3.2 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | ||||
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Micron Technology Inc. 62F2G64D8EK-023 WT ES:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F2G64D8EK-023WTES:CTR | 2,000 | 4.266 GHz | Volatile | 128Gbit | DRAM | 2G x 64 | Parallel | - | ||||
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Micron Technology Inc. 62F768M64D4EK-023 AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C | Surface Mount | 441-TFBGA | MT62F768 | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F768M64D4EK-023AIT:BTR | 1,500 | 3.2 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | Parallel | - | |||
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Micron Technology Inc. 40A1G16KNR-075 IT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (7.5x13.5) | 557-MT40A1G16KNR-075IT:ETR | 2,000 | 1.333 GHz | Volatile | 16Gbit | 19 ns | DRAM | 1G x 16 | Parallel | 15ns | |||
| Micron Technology Inc. 53E1G32D2FW-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1G32D2FW-046WT:A | 1 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | 18ns | |||||
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Micron Technology Inc. 29VZZZBDAFQKWL-046 W.G0J TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 254-BGA | FLASH - NAND, DRAM - LPDDR4X | - | 254-MCP | 557-MT29VZZZBDAFQKWL-046W.G0JTR | 2,000 | 2.133 GHz | Non-Volatile, Volatile | 2Tbit (NAND), 48Gbit (LPDDR4X) | FLASH, RAM | 256G x 8 (NAND), 1.5G x 32 (LPDDR4X) | UFS2.1 | - | ||||
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Micron Technology Inc. 29F4T08EMLCHD4-QJ:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F4T08EMLCHD4-QJ:C | 1 | |||||||||||||||||
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Micron Technology Inc. FC256GAZAOTD-AIT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MTFC256GAZAOTD-AITTR | 2,000 | |||||||||||||||||
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Micron Technology Inc. 53E2G32D4DE-046 AUT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E2G32D4DE-046AUT:C | 1 | 2.133 GHz | Volatile | 64Gbit | 3.5 ns | DRAM | 2G x 32 | Parallel | 18ns | |||
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Micron Technology Inc. 62F1G64D8EK-031 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F1G64D8EK-031AAT:BTR | 1,500 | 3.2 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | Parallel | - | ||||
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Micron Technology Inc. 62F768M64D4EK-023 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 441-TFBGA | MT62F768 | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F768M64D4EK-023AAT:B | 1 | 4.266 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | Parallel | - | |||
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Micron Technology Inc. 62F2G32D8DR-031 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F2G32D8DR-031WT:BTR | 2,000 | |||||||||||||||||
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Micron Technology Inc. 62F1536M64D8CL-026 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | - | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F1536M64D8CL-026WT:B | 1 | 3.2 GHz | Volatile | 96Gbit | DRAM | 1.5G x 64 | Parallel | - | ||||
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Micron Technology Inc. 53E4G32D8GS-046 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR4 | - | - | 557-MT53E4G32D8GS-046WT:CTR | 2,000 | 2.133 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | ||||
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Micron Technology Inc. FC32GASAONS-IT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | e•MMC™ | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | 557-MTFC32GASAONS-ITTR | 2,000 | 52 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | UFS2.1 | - | ||||
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Micron Technology Inc. 53E4G32D8GS-046 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR4 | - | - | 557-MT53E4G32D8GS-046WT:C | 1 | 2.133 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | ||||
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Micron Technology Inc. 62F2G64D8EK-023 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F2G64D8EK-023WT:B | 1 | 4.266 GHz | Volatile | 128Gbit | DRAM | 2G x 64 | Parallel | - | ||||
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Micron Technology Inc. 29F2G01ABAGD12-AUT:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F2G01ABAGD12-AUT:G | 1 | |||||||||||||||||
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Micron Technology Inc. 29GZ5A5BPGGA-046IT.87J | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-WFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-WFBGA (8x9.5) | 557-MT29GZ5A5BPGGA-046IT.87J | 1 | Non-Volatile, Volatile | 4Gbit | 25 ns | FLASH, RAM | 512M x 8 | ONFI | 30ns | ||||
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Micron Technology Inc. 62F2G32D4DS-023 FAAT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F2G32D4DS-023FAAT:CTR | 2,000 | |||||||||||||||||
|
Micron Technology Inc. 62F4G32D8DV-023 IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F4G32D8DV-023IT:BTR | 2,000 | 4.266 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | ||||
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Micron Technology Inc. 29F8T08GULCEM4-QA:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08GULCEM4-QA:C | 1 | |||||||||||||||||
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Micron Technology Inc. 62F3G32D8DV-026 AAT ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F3G32D8DV-026AATES:BTR | 2,000 | 3.2 GHz | Volatile | 96Gbit | DRAM | 3G x 32 | Parallel | - | ||||
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Micron Technology Inc. 29F1T08EELEEJ4-QA:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EELEEJ4-QA:ETR | 2,000 | |||||||||||||||||
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Micron Technology Inc. 62F768M64D4BG-036 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F768M64D4BG-036WT:ATR | OBSOLETE | 2,000 | 2.75 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | Parallel | - | |||
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Micron Technology Inc. 29F2T08EMLEEJ4-R:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 70°C | Surface Mount | 132-VBGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-VBGA (12x18) | 557-MT29F2T08EMLEEJ4-R:ETR | 2,000 | Non-Volatile | 2Tbit | FLASH | 256G x 8 | Parallel | - |
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