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Part Number |
Manufacturers
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Desc
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In Stock
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Packing
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Rfq |
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Mosfet Array 650V Surface Mount 30-QFN (8x10)
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100 |
30-PowerWFQFN |
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RF Mosfet 22-QFN (5x7)
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3 |
22-PowerVFQFN |
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Mosfet Array 650V Surface Mount 30-QFN (8x10)
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1399 |
30-PowerWFQFN |
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Mosfet Array 650V Surface Mount 30-QFN (8x10)
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2576 |
30-PowerWFQFN |
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RF Mosfet 32 V 100 mA 30MHz ~ 4GHz 17.5dB 20W 8-QFN (5x6)
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40 |
8-VDFN Exposed Pad |
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RF Mosfet 20MHz ~ 3GHz 17dB 25W 8-QFN (5x6)
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105 |
8-VDFN Exposed Pad |
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RF Mosfet 22-QFN (5x7)
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3 |
22-PowerVFQFN |
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RF Mosfet 22-QFN (5x7)
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3 |
22-PowerVFQFN |
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RF Mosfet 32 V 50 mA 30MHz ~ 4GHz 18dB 12.5W
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101 |
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Littelfuse IXFN110N85X technical specifications, attributes, parameters and parts with similar specifications to Littelfuse IXFN110N85X.TypeParameterPart StatusActivePin Count4ConfigurationSingle Dual SourceChannel TypeNAutomotiveNoCategoryPower MOSFETChannel ModeEnhancementECCN (US)EAR99EU RoHSC...
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1 |
Littelfuse IXFN110N85X |
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Diodes Incorporated 1SMB5923B-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 1SMB5923B-13.TypeParameterFactory Lead Time10 WeeksContact PlatingTinMountSurface MountMounting TypeSurface MountPackage / CaseDO-214AA, SMBNumber of Pins...
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1 |
Diodes Incorporated 1SMB5923B-13 |
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N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
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673 |
TO-247-4 |
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N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
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2 |
TO-220-3 Full Pack |
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N-Channel 600 V 23A (Tc) 390W (Tc) Through Hole PG-TO220-3-1
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1 |
TO-220-3 |
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Diode 1200 V 56A Surface Mount PG-TO263-2-1
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6888 |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diode 1200 V 31.9A Surface Mount PG-TO263-2-1
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5 |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IGBT Module
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3165 |
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Bipolar (BJT) Transistor NPN 100 V 1 A 50MHz 625 mW Through Hole TO-92
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7316 |
TO-226-3, TO-92-3 (TO-226AA) |
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Bipolar (BJT) Transistor PNP 30 V 100 mA 150MHz 625 mW Through Hole TO-92
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1790 |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 1 W Through Hole TO-92
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3306 |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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Bipolar (BJT) Transistor PNP 400 V 200 mA 625 mW Through Hole TO-92
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5462 |
TO-226-3, TO-92-3 (TO-226AA) |
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Bipolar (BJT) Transistor NPN 45 V 100 mA 150 mW Surface Mount DFN1006-3
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1938 |
SC-101, SOT-883 |
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Bipolar (BJT) Transistor PNP 25 V 1.5 A 190MHz 1 W Through Hole TO-92
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3769 |
TO-226-3, TO-92-3 (TO-226AA) |
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Bipolar (BJT) Transistor PNP 45 V 100 mA 150MHz 625 mW Through Hole TO-92
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5177 |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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Bipolar (BJT) Transistor PNP 25 V 500 mA 150MHz 625 mW Through Hole TO-92
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6760 |
TO-226-3, TO-92-3 (TO-226AA) |
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Bipolar (BJT) Transistor PNP 30 V 500 mA 200MHz 500 mW Through Hole TO-92
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5090 |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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Bipolar (BJT) Transistor PNP 45 V 1 A 100MHz 830 mW Through Hole TO-92
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6404 |
TO-226-3, TO-92-3 (TO-226AA) |
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Bipolar (BJT) Transistor NPN 65 V 100 mA 300MHz 625 mW Through Hole TO-92
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7361 |
TO-226-3, TO-92-3 (TO-226AA) |
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Bipolar (BJT) Transistor PNP 20 V 2 A 200MHz 400 mW Through Hole TO-92S
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9760 |
TO-226-3, TO-92-3 Short Body (Formed Leads) |
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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92S
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9020 |
TO-226-3, TO-92-3 Short Body |
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