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Transistors

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Part Number
Manufacturers
Desc
In Stock
Packing
Rfq
Mosfet Array 650V Surface Mount 30-QFN (8x10)
100
30-PowerWFQFN
RF Mosfet 32 V 100 mA 30MHz ~ 4GHz 17.5dB 20W 8-QFN (5x6)
40
8-VDFN Exposed Pad
RF Mosfet 20MHz ~ 3GHz 17dB 25W 8-QFN (5x6)
105
8-VDFN Exposed Pad
RF Mosfet 22-QFN (5x7)
3
22-PowerVFQFN
RF Mosfet 22-QFN (5x7)
3
22-PowerVFQFN
RF Mosfet 22-QFN (5x7)
3
22-PowerVFQFN
Mosfet Array 650V Surface Mount 30-QFN (8x10)
1399
30-PowerWFQFN
Mosfet Array 650V Surface Mount 30-QFN (8x10)
2576
30-PowerWFQFN
RF Mosfet 32 V 50 mA 30MHz ~ 4GHz 18dB 12.5W
101
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
673
TO-247-4
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
2
TO-220-3 Full Pack
N-Channel 600 V 23A (Tc) 390W (Tc) Through Hole PG-TO220-3-1
1
TO-220-3
IGBT Module
3165
Bipolar (BJT) Transistor NPN 100 V 1 A 50MHz 625 mW Through Hole TO-92
7316
TO-226-3, TO-92-3 (TO-226AA)
Bipolar (BJT) Transistor PNP 30 V 100 mA 150MHz 625 mW Through Hole TO-92
1790
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 1 W Through Hole TO-92
3306
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Bipolar (BJT) Transistor PNP 400 V 200 mA 625 mW Through Hole TO-92
5462
TO-226-3, TO-92-3 (TO-226AA)
Bipolar (BJT) Transistor NPN 45 V 100 mA 150 mW Surface Mount DFN1006-3
1938
SC-101, SOT-883
Bipolar (BJT) Transistor PNP 25 V 1.5 A 190MHz 1 W Through Hole TO-92
3769
TO-226-3, TO-92-3 (TO-226AA)
Bipolar (BJT) Transistor PNP 45 V 100 mA 150MHz 625 mW Through Hole TO-92
5177
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Bipolar (BJT) Transistor PNP 25 V 500 mA 150MHz 625 mW Through Hole TO-92
6760
TO-226-3, TO-92-3 (TO-226AA)
Bipolar (BJT) Transistor PNP 30 V 500 mA 200MHz 500 mW Through Hole TO-92
5090
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Bipolar (BJT) Transistor PNP 45 V 1 A 100MHz 830 mW Through Hole TO-92
6404
TO-226-3, TO-92-3 (TO-226AA)
Bipolar (BJT) Transistor NPN 65 V 100 mA 300MHz 625 mW Through Hole TO-92
7361
TO-226-3, TO-92-3 (TO-226AA)
Bipolar (BJT) Transistor PNP 20 V 2 A 200MHz 400 mW Through Hole TO-92S
9760
TO-226-3, TO-92-3 Short Body (Formed Leads)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92S
9020
TO-226-3, TO-92-3 Short Body
P-Channel 100 V 12A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
1
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel 500 V 17A (Tc) 280W (Tc) Through Hole TO-220AB
1491
TO-220-3
N-Channel 400 V 3.3A (Tc) 3.1W (Ta), 50W (Tc) Through Hole TO-262-3
7784
TO-262-3 Long Leads, I²Pak, TO-262AA
IGBT Module Through Hole IMS-2
6328
19-SIP (13 Leads), IMS-2
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